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| SEMiX553GB128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 125 C Tj = 150 C Tc = 25 C Tc = 80 C 1200 533 379 300 600 -20 ... 20 10 -40 ... 150 421 289 300 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 600 2300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R) 3s SPT IGBT Modules SEMiX553GB128Ds Tj = 150 C IFnom Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* Characteristics * AC inverter drives * UPS * Electronic welders up to 20 kHz Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions IC = 300 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V Tj = 25 C Tj = 125 C min. typ. 1.9 2.1 1 0.9 3.0 4.0 max. 2.35 2.55 1.15 1.05 4.0 5.0 6.5 0.3 Unit V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 300 A RG on = 3 RG off = 3 Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C Tj = 125 C per IGBT Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 4.5 5 0.1 28.3 1.86 1.17 2880 1.33 185 65 27 635 80 33 0.061 K/W GB (c) by SEMIKRON Rev. 8 - 16.12.2009 1 SEMiX553GB128Ds Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C rF Tj = 25 C Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 5400 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 0.75 0.5 2.5 2.7 min. typ. 2.0 1.8 1.1 0.85 3.0 3.2 325 46 17 max. 2.50 2.3 1.45 1.2 3.5 3.7 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 SEMiX(R) 3s SPT IGBT Modules SEMiX553GB128Ds IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.11 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Features * Homogeneous Si * SPT = Soft-Punch-Through technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g K Typical Applications* * AC inverter drives * UPS * Electronic welders up to 20 kHz Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% GB 2 Rev. 8 - 16.12.2009 (c) by SEMIKRON SEMiX553GB128Ds Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 8 - 16.12.2009 3 SEMiX553GB128Ds Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 8 - 16.12.2009 (c) by SEMIKRON SEMiX553GB128Ds SEMiX 3s spring configuration (c) by SEMIKRON Rev. 8 - 16.12.2009 5 SEMiX553GB128Ds * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 6 Rev. 8 - 16.12.2009 (c) by SEMIKRON |
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